SiC MOSFET

1200V/7mΩ SiC MOSFET器件
产品特点: · 超低导通电阻实现低导通损耗 · 工作电流高,栅极寄生电容低 · 正温度系数特性易并联使用,反向漏电流低 · 开尔文引脚降低开关损耗 · TO247PLUS封装实现低热阻 行业应用: · 汽车主驱 · 大电流充电器 · 断路器 · 不间断电源 · 通用驱动器 · 太阳能功率优化器
Part No.
Package
BVDS(V)
RDS(on) (mΩ)
VGS(th)(V) (Typ.)
Continuous Drain Current(A)(max)
IDSS(μA) (Typ.)
VSD(V)(Typ.)
TJ(max)(℃)
Data Sheet
N1M065030PD2 TO-247-3 650 30 2.6 70 1 4.2 175
N1M065060PD2 TO-247-3 650 60 2.6 39 1 4.2 175
N1M065030PK2 TO-247-4 650 30 2.6 70 1 4.2 175
N1M065060PK2 TO-247-4 650 60 2.6 39 1 4.2 175
N1M120021PN TO-263-7 1200 21 2.7 100 1 4.1 175
N1M120040PN2 TO-263-7 1200 40 2.7 60 1 4.1 175
N1M120080PN2 TO-263-7 1200 80 2.7 36 1 4 150
N1M17001KPN2 TO-263-7 1700 1000 3 5 1 4.2 150
N1M170650PD2 TO-247-3 1700 650 2.6 7.0 1 4.2 150
N1M170045PK2 TO-247-4 1700 45 2.6 72 1 3.6 150
N1M170045PD2 TO-247-3 1700 45 2.6 72 1 4.5 150
N1M17001KPD2 TO-247-3 1700 1000 3.0 5 1 4.2 150
N2M120007PP0 TO-247-4L Plus 1200 7 2.4 310 4.1 175
N1M120021PK3 TO-247-4 1200 21 2.7 100 1 4.1 175
N1M120040PK3 TO-247-4 1200 40 2.7 60 1 4.1 175
N1M120080PK-A TO-247-4 1200 80 2.7 36 1 4 150
N1M120021PD3 TO-247-3 1200 21 2.7 100 1 4.1 175
N1M120040PD3 TO-247-3 1200 40 2.7 60 1 4.1 175
N1M120080PD1 TO-247-3 1200 80 2.7 36 1 4 150